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Laser-Induced Metal Deposition on Silicon Membranes for X-Ray Lithography

Published online by Cambridge University Press:  26 February 2011

H.-C. Petzold ,
R. Putzar ,
U. Weigmann  and
I. Wilke
H.-C. Petzold
Affiliation:
Fraunhofer-Institut für Mikrostrukturtechnik, Dillenburger Str. 53, D-1000 Berlin 33, Federal Republic of Germany
R. Putzar
Affiliation:
Fraunhofer-Institut für Mikrostrukturtechnik, Dillenburger Str. 53, D-1000 Berlin 33, Federal Republic of Germany
U. Weigmann
Affiliation:
Fraunhofer-Institut für Mikrostrukturtechnik, Dillenburger Str. 53, D-1000 Berlin 33, Federal Republic of Germany
I. Wilke
Affiliation:
Fraunhofer-Institut für Mikrostrukturtechnik, Dillenburger Str. 53, D-1000 Berlin 33, Federal Republic of Germany
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Abstract

The repair of clear defects on X-ray masks (2 urn Si membranes) requires the localized deposition of metal films with high aspect ratios and high X-ray opacity. Laser-induced heavy metal deposition from organometal-lic gas atmospheres has been investigated with respect to these requirements. An experimental comparison of pyrolytic (W) and photolytic (esp. W, Sn) depositions on thin Si membranes was performed to find out which of these two mechanisms is more favourable for X-ray mask repair. Using a simple model, the laser-induced temperature distribution in the membrane was calculated which strongly affects pyrolytic deposition. Although photolytic deposition tends to yield X-ray opacities below corresponding bulk values, this process turned out to be more suitable due to its better spatial resolution in this case of Si membranes used as substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 75
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Weigmann, U., Burghause, H., Schaffer, H., presented at the Microcircuit Engineering Conference, Paris, 1987 (to be published)Google Scholar
2 Moody, J.E., Hendel, R.H., J. Appl. Phys. 53, 4364 (1982)Google Scholar
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4 Petzold, H.-C., Putzar, R., Weigmann, U., Wilke, I., presented at the Microcircuit Engineering Conference, Paris, 1987 (to be published)Google Scholar