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Lateral Reactions of Gaas with Ni Studied by Transmission Electron Microscopy

Published online by Cambridge University Press:  26 February 2011

S. H. Chen ,
C. B. Carter ,
C. J. Palmstrøm  and
T. Ohashi
S. H. Chen
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY14853
C. J. Palmstrøm
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY14853
T. Ohashi
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
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Abstract

A new method has been developed for making self-supporting, thin films which can be used for the in situ study, by hot-stage, transmission electron microscopy, of the reaction between Ni and GaAs. The thin-film, lateral diffusion-couples have been used to study both the kinetics and the formation of new phases. The growth rate of the ternary compound, N2GaAs showed a parabolic time dependence. At an annealing temperature of 300*C, the present experimental results show that Ni is the diffusing species and that the Ga and As remain essentially immobile. Diffusion coefficients obtained by this method are in very good agreement with those which have been obtained using conventional thin-film techniques. The results of this new technique are particularly important in view of the difficulty in identifying the composition of the product phase by methods which do not have the same lateral resolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 361
Copyright
Copyright © Materials Research Society 1986

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References

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