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Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals

Published online by Cambridge University Press:  11 February 2011

Elisabete M.C. Rita ,
Ulrich Wahl ,
Armandina L. Lopes ,
João P. Araújo ,
João G. Correia ,
Eduardo Alves ,
José C. Soares  and
Isolde Collaboration
Elisabete M.C. Rita
Affiliation:
Instituto Tecnológico e Nuclear, Estrada Nacional 10, PT-2685 Sacavém, Portugal CFNUL, Av. Prof. Gama Pinto 2, PT-1699 Lisboa Codex, Portugal
Ulrich Wahl
Affiliation:
Instituto Tecnológico e Nuclear, Estrada Nacional 10, PT-2685 Sacavém, Portugal CFNUL, Av. Prof. Gama Pinto 2, PT-1699 Lisboa Codex, Portugal
Armandina L. Lopes
Affiliation:
Departamento de Física da Universidade de Aveiro, PT-3800 Aveiro, Portugal
João P. Araújo
Affiliation:
IFIMUP, University of Porto, PT-4150 Porto, Portugal
João G. Correia
Affiliation:
Instituto Tecnológico e Nuclear, Estrada Nacional 10, PT-2685 Sacavém, Portugal CFNUL, Av. Prof. Gama Pinto 2, PT-1699 Lisboa Codex, Portugal CERN-EP, CH-1211 Geneva 23, Switzerland
Eduardo Alves
Affiliation:
Instituto Tecnológico e Nuclear, Estrada Nacional 10, PT-2685 Sacavém, Portugal CFNUL, Av. Prof. Gama Pinto 2, PT-1699 Lisboa Codex, Portugal
José C. Soares
Affiliation:
Instituto Tecnológico e Nuclear, Estrada Nacional 10, PT-2685 Sacavém, Portugal CFNUL, Av. Prof. Gama Pinto 2, PT-1699 Lisboa Codex, Portugal
Isolde Collaboration
Affiliation:
CERN-EP, CH-1211 Geneva 23, Switzerland
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Abstract

In this work we report on the lattice site location of rare earths in single-crystalline ZnO by means of the emission channeling (EC) technique. Following low dose (3×1013at/cm2) 60 keV ion implantation of the precursor isotope 169Yb, a position-sensitive electron detector was used to monitor the angular distribution of the conversion electrons emitted from 169Tm* as a function of the annealing temperature up to 600°C in vacuum. An additional annealing at 800°C in flowing O2 was performed. The EC measurements revealed that around 95–100% of the rare earth atoms occupy substitutional Zn sites up to an annealing temperature of 600°C/vacuum. After the 800°C/O2 annealing, the emission channeling effects decreased considerably.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M3.7
Copyright
Copyright © Materials Research Society 2003

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References

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