Hostname: page-component-5c6d5d7d68-wp2c8 Total loading time: 0 Render date: 2024-08-23T14:16:41.676Z Has data issue: false hasContentIssue false
  • English
  • Français

Lattice Structure at ZnSe-GaAs Heterojunction Interfaces Prepared by Organometallic Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

F. A. Ponce ,
W. Stutius  and
J. G. Werthen
F. A. Ponce
Affiliation:
Materials Research Laboratory, Hewlett–Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, (U.S.A.)
W. Stutius
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, (U.S.A.)
J. G. Werthen
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, (U.S.A.)
Get access

Abstract

The lattice structure of ZnSe grown on GaAs by a low temperature low pressure organometallic chemical vapor deposition (CVD) process was studied using high resolution transmission electron microscopy. The defect structure of ZnSe epitaxial layers and of their interface with the GaAs substrate was directly imaged in cross section for GaAs substrate surfaces in the <100> and <111> orientations. It is shown that the ZnSe layers grow indeed epitaxially. The ZnSe layers grown on GaAs(100) contain a large density of faulted loops which are extrinsic in nature, whereas the prevailing defects in ZnSe layers grown on GaAs(111)B substrates are microtwins and stacking faults parallel to the filmsubstrate interface. A possible connection between the observed defect structure and the reported photoluminescence and electrical transport properties of ZnSe layers grown by organometallic CVD is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 133
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Stutius, W., J. Cryst. Growth, 59 (1982) 1.Google Scholar
2 Stutius, W., J. Appl. Phys., 53 (1982) 284.Google Scholar
3 Yao, T., Makita, Y. and Maekawa, S., Appl. Phys. Lett., 35 (1979) 97.Google Scholar
4 Stutius, W., J.Electron. Mater., 10 (1981) 95.Google Scholar
5 Ponce, F. A., in Narayan, J. and Tan, T. Y. (eds.), Defects in Semiconductors, North-Holland, Amsterdam, 1981, p. 285.Google Scholar
6 Ponce, F. A., Yamashita, T., Bube, R. H. and Sinclair, R., in Narayan, J. and Tan, T. Y. (eds.), Defects in Semiconductors, North-Holland, Amsterdam, 1981, p. 503.Google Scholar
7 Ponce, F. A., Appl. Phys. Lent., 41 (1982) 371.CrossRefGoogle Scholar
8 Iwamoto, M. and Kasami, A., Appl. Phys. Lett., 28 (1976) 591.Google Scholar
9 Devlin, S. S., in Aven, M. and Prener, J. S. (eds.), Physics and Chemistry of II–VI Compounds, North-Holland, Amsterdam, 1967, p. 596.Google Scholar