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Lead Zirconate Titanate Stannate Thin Films for Large Strain Microactuator Applications

Published online by Cambridge University Press:  25 February 2011

Keith G. Brooks
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park. PA 16802
Jiayu Chen
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park. PA 16802
K.R. Udayakumar
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park. PA 16802
L. Eric Cross
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park. PA 16802
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Abstract

Thin films of antiferroelectric tetragonal (Pb.97 La.02 )(Zr1-x-yTixSny)O3 have been synthesized from acetate and alkoxide precursors via a sol-gel process. A multiple layer spin coating procedure was used to prepare 0.4 gtm films on platinized silicon wafers. Crystallization of the films as confirmed by x-ray diffraction was achieved by rapid thermal annealing at 700°C for 20 seconds. Antiferroelectric to ferroelectric phase switching threshold fields were determined from P-E hysteresis curves. Longitudinal strain is reported as a function of applied electric field, with a maximum strain of 1.6×10-3 measured at an applied dc bias field of 120 kV/cm on a film of composition Pb.97 La.02 (Zr.60Ti.l0Sn.30 )O3. These films show promise for micromechanical actuator applications due to the high strain associated with field forced antiferroelectric to ferroelectric phase switching.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

[1] Fan, L.S, Tai, Y.C. and Muller, R.S., Proc. IEEE Int. Electr. Devices Meeting, San Francisco, CA 666 (1988).Google Scholar
[2] Flynn, A.M., Tavrow, L.S., Bart, S.F., Brooks, R.A., Ehrlich, D.J., Udayakumar, K.R. and Cross, L. E., IEEE Ultrasonics Symp., Honolulu, Hawaii, 1163 (1990).Google Scholar
[3] Udayakumar, K.R., Chen, J.. Krupanidhi, S.B., and Cross, L.E., Proc. 7th Int. Symp. Appl. Ferroelectrics, June 8-9 1990, Champaign-Urbana, IL, 741 (1991).Google Scholar
[4] Moroney, R.M., White, R.M. and Howe, R.T., Proc. IEEE MEMS, Napa Valley, CA 182 (1990).Google Scholar
[5] Shirane, G., Sawaguchi, E., and Takagi, Y., Phys. Rev. 84 476 (1951).Google Scholar
[6] Sawaguchi, E., J. Phys. Soc. Japan 8 615 (1951).Google Scholar
[7] Berlincourt, D., IEEE Trans. Sonics Ultrasonics SU–13 116 (1966).Google Scholar
[8] Pan, W. Y., Dam, C. Q., Zhang, Q. M. and Cross, L.E., J. Appl. Phys. 66 6014 (1989).Google Scholar
[9] Uchino, K. and Nomura, S., Ferroelectrics 50 517 (1987).Google Scholar
[10] Pan, W., Zhang, Q., Bhalla, A and Cross, L.E., J. Am. Ceram. Soc. 72 571 (1989).Google Scholar
[11] Budd, K.D., Dey, S.K. and Payne, D.A., Brit. Ceram. Proc. 36 107 (1985).Google Scholar
[12] Zhang, Q.M., Pan, W.Y. and Cross, L.E., Ferroelectrics 82 (1989).Google Scholar