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Localized Lifetime Control In Silicon Bipolar Power Devices By Voids Induced By He Ion Implantation

Published online by Cambridge University Press:  10 February 2011

M. Saggio ,
V. Raineri ,
F. Frisina  and
E. Rimini
M. Saggio
Affiliation:
ST Microelectronics, stradale Primosole 50, I-95121 Catania, Italy, mario.saggio@st.com
V. Raineri
Affiliation:
CNR – IMETER, Stradale Primosole 50, I-95121 Catania, Italy
F. Frisina
Affiliation:
ST Microelectronics, stradale Primosole 50, I-95121 Catania, Italy, mario.saggio@st.com
E. Rimini
Affiliation:
INFM and Dipartimento di Fisica, Corso Italia 57, 1–95121 Catania, Italy
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Abstract

Localized lifetime control in silicon bipolar devices is presented and discussed. It was achieved by formation of a void layer by He ion implantation. The void formation is reviewed and the void properties are described and carefully considered. Simulations demonstrate the advantages of using localized lifetime control, while the innovative method is applied to fabrication of high speed Insulated Gate Bipolar Transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 45
Copyright
Copyright © Materials Research Society 1998

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