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Long Range Order in Ultra-Thin SiO2 Grown on Ordered Si(100)

Published online by Cambridge University Press:  10 February 2011

Q.B. Hurst ,
N. Herbots ,
J.M. Shaw ,
M.M. Floyd ,
D.J. Smith ,
R.J. Culbertson ,
M.P. Grams ,
J.D. Bradley ,
P Zimmerman  and
V. Atluri
Q.B. Hurst
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
N. Herbots
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
J.M. Shaw
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
M.M. Floyd
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
D.J. Smith
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
R.J. Culbertson
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
M.P. Grams
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
J.D. Bradley
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504
P Zimmerman
Affiliation:
Intel Corporation, Chandler, AZ 85226
V. Atluri
Affiliation:
Intel Corporation, Chandler, AZ 85226
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Abstract

In this paper, we investigate the correlation of electrical properties and structure of 1-4 nm thick SiO2 grown on H-passivated Si(100) for ultra-thin gate applications. Ordered (1×1) Si(100) stable in ambient air is obtained at room temperature by wet chemical cleaning. Ion Beam Analysis using a combination of ion channeling and 16O(α,α)16O nuclear resonance yields Si areal densities lower than that of a bulk-terminated Si crystal as calculated by Monte-Carlo simulations. This result indicates shadowing of Si substrate atoms by Si atoms in the thermally grown oxide. Detection of order by ion channeling is supported by Reflection High Energy Electron Diffraction (RHEED). C-V and I-V measurements are generally inconclusive for ultra-thin (1-2 nm) oxides because of leakage and breakdown. Surface charge analysis enables a comparison between ordered oxides and conventional oxides. The results are promising.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 181
Copyright
Copyright © Materials Research Society 1999

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References

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