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Low Frequency Noise in Small MOS Devices

Published online by Cambridge University Press:  03 September 2012

Michael J. Uren
Michael J. Uren*
Affiliation:
Defence Research Agency, RSRE Malvern, St. Andrew's Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom
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Abstract

Random telegraph signals can be seen in the conductivity of submicron MOSFETs due to capture and emission from individual SiO2 defects. They show activated capture times, temperature dependent energy levels as well as a complex scattering behaviour. It is shown how 1/f noise in large MOSFETs arises naturally from the properties of these defects and how models based on this understanding can be constructed. 1/f noise is shown to be a poor tool for the study of the traps due to the loss of information associated with averaging over many active signals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 751
Copyright
Copyright © Materials Research Society 1992

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