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Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications

Published online by Cambridge University Press:  28 February 2011

R. A. Levy  and
M. L. Green
R. A. Levy
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
M. L. Green
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

This paper reviews the current status of LPCVD tungsten and aluminum for VLSI applications. Using deposition chemistries based on tungsten hexafluoride and tri-isobutyl aluminum, W and Al deposits are characterized with respect to their electrical, mechanical, structural, chemical and optical properties. Although results of this study prove these two LPCVD processes to be compatible with current VLSI fabrication, certain problems must still be resolved for complete commercial acceptance. These problems include, in the case of selective LPCVD tungsten, the occurrence of leakage current across N+/P-Tub junctions, and in the case of LPCVD aluminum, the relatively poor electromigration resistance (compared to Al-Cu) and excess surface roughness.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 229
Copyright
Copyright © Materials Research Society 1986

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