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Low Resistivity Aluminum Nitride: Carbon (AIN:C) Films Grown by Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

K. Wongchotiqul ,
N. Chen ,
D. P. Zhang ,
X. Tang  and
M. G. Spencer
K. Wongchotiqul
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
N. Chen
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
D. P. Zhang
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
X. Tang
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
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Abstract

Low resistivity single crystal aluminum nitride-carbon (AIN:C) films were grown by metal organic chemical vapor deposition (MOCVD). The growth system used ammonia (NH3), trimethylaluminum (TMA), hydrogen (H2), and propane (C3H8) precursors. Films produced with high partial pressure of propane during growth exhibited high conductivity. Van der Paw measurements indicated that the resistivity of the as grown films changed dramatically from 108 ohm-cm for unintentionally doped samples to less than .2 ohm-cm for partial pressures of propane greater than 0.5×10−3 torr. Reflection electron diffraction (RHEED) measurements performed "in situ" just after film growth indicated that the material is single crystal up to a propane partial pressure of 2.5×10−3 torr. P-n junctions of n-type 6H-SiC and p-type AIN:C were fabricated, blue emission (centered at 490nm) was observed from the heterojunction under forward bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 279
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Chu, T.L., Ing, D.W., and Noreika, A.J., Solid State Electron, 10, 1023 (1967).Google Scholar
2 Yim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankove, J.I., Ettenberk, M., and Gilbert, S.L., J. Appl. Phys. 44(1973), 292.Google Scholar
3 Rutz, R.F., Appl. Phys. Lett., 28, 379 (1976).Google Scholar