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Low Temperature Formation of Ultra-Thin SiO2 Layers Using Direct Oxidation Method in a Catalytic Chemical Vapor Deposition System

Published online by Cambridge University Press:  10 February 2011

A. Izumi ,
S. Sohara ,
M. Kudo  and
H. Matsumura
A. Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
S. Sohara
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
M. Kudo
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
H. Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
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Abstract

This paper reports a procedure for low-temperature formation of silicon dioxide (SiO2) using a catalytic chemical vapor deposition (Cat-CVD) system. The surface of Si(100) is oxidized at temperatures as low as 200°C and a few nm SiO2 films are formed. Electrical and structural properties of the layers are investigated. It is found that breakdown electric field, leakage current and the density of intermediate oxidation states is comparable with thermally oxidized sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 115
Copyright
Copyright © Materials Research Society 1999

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References

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