Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-20T04:37:35.327Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches

Published online by Cambridge University Press:  02 August 2011

Kai Ma ,
Ryohei Urata ,
David A. B. Miller  and
James S. Harris
Kai Ma
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
Ryohei Urata
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
David A. B. Miller
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
James S. Harris
Affiliation:
Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
Get access

Abstract

We have grown GaAs directly on silicon substrates by molecular beam epitaxy (MBE) at low substrate temperatures (∼250 °C). The silicon wafer surface cleaning and GaAs film growth processes were done at temperatures lower than the Si-Al eutectic temperature, in order to enable monolithic integration of low-temperature-grown-GaAs (LT-GaAs) photoconductive switches with Si-CMOS circuits. In situ reflection high-energy electron diffraction (RHEED), ex situ x-ray diffraction (XRD) and atomic force microscopy (AFM) studies were performed to characterize the LT-GaAs film quality. The film surfaces show less than 1 nm root-mean-square (rms) roughness and the anti-phase domain (APD) density is below the XRD detection limit. Metal-semiconductor-metal (MSM) photoconductive switches were made using this material. A time-resolved electro-optic sampling technique was used to determine the responsivity and speed of the switches. A full-width at half-maximum (FWHM) switching time of ∼2 picoseconds was achieved and the responsivity of switches made from LT-GaAs on Si material was comparable to that of switches made from LT-GaAs on GaAs material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G3.14
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Urata, R., Takahashi, R.,Sabnis, V. A.,Miller, D. A. B., and Harris, J. S. Jr, IEEE Photo. Technol. Lett., 13, 717 (2001).Google Scholar
2. Urata, R., Nathawad, L. Y., Ma, K., Takahashi, R., Miller, D. A. B., Wooley, B. A., and Harris, J. S. Jr, in Proceeding of IEEE LEOS Annual Meeting, Vol. 2, Glasgow, Scotland, 2002, pp. 809–810.Google Scholar
3. Smith, F.W.,Lee, H. Q., Diadiuk, V.,Hollis, M. A., Calawa, A. R., Gupta, S.,Frankel, M., Dykaar, D. R., Mourou, G., and Hsiang, T., Appl. Phys. Lett. 54, 890 (1989)Google Scholar
4. Georgakilas, A., Panayotatos, P., Stoemenos, J., Mourrain, J. L., and Christou, A., J. Appl. Phys. 71, 2679 (1992).Google Scholar
5. Valdmanis, J. A., and Mourou, G., IEEE J. Quantum Electron. QE-22, 69 (1986).Google Scholar
6. Frankel, M. Y., Tadayon, B., and Carruthers, T. F., Appl. Phys. Lett., 63, 255 (1993).Google Scholar
7. Kadow, C., Fleischer, S. B., Ibbetson, J. P., Bowers, J. E., and Gossard, A. C., Appl. Phys. Lett., 75, 2575 (1999)Google Scholar
8. Fang, S. F., Aomi, K., Iyer, S., Morkoc, H., Zabel, H., Choi, C., and Otsuka, N., J. Appl. Phys., 68, R31 (1990).Google Scholar