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Low-Pressure Chemical Vapor Deposition of Borosilicate Glasses and their Application to Wafer Bonding

Published online by Cambridge University Press:  15 March 2011

Darren M. Hansen ,
Peter D. Moran  and
T. F. Kuech
Darren M. Hansen
Affiliation:
Department of Chemical Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, U.S.A.
Peter D. Moran
Affiliation:
Department of Chemical Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, U.S.A.
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, U.S.A.
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Abstract

The essential features of the deposition process and the film properties of borosilicate glasses are presented here as an alternative to pure SiO2in wafer bonding and compliant substrates. While the deposition of SiO2 is a well-studied system, the deposition of boron-doped films is less understood. The deposition rate of the SiO2 mole fraction in the films was accelerated by the presence of trimethylborate and oxygen and this is associated with an increased adsorption of the tetraethylorthosilicate related precursor in the presence of boranols. Typical deposition conditions result in borosilicate glass films with an r.m.s. roughness of ∼0.5 nm as measured by atomic force microscopy. Annealing the films at temperatures above 550°C reduces the film roughness via glass reflow. Room temperature bonding of these films was achieved after a 250 WO2 plasma surface treatment. Fourier-transform infrared investigations of the bonded interface revealed the importance of the role of surface OH and H2O groups in the bonding of these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O4.7
Copyright
Copyright © Materials Research Society 2000

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