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Low-Temperature Formation of SiO2 and High Dielectrics Constant Material for ULSI in 21st Century

Published online by Cambridge University Press:  10 February 2011

Tadahiro Ohmi ,
Katsuyuki Sekinet ,
Ryu Kaiharat ,
Yuji Saitot ,
Yasuyuki Shirai  and
Masaki Hirayama
Tadahiro Ohmi
Affiliation:
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Katsuyuki Sekinet
Affiliation:
Department of Electronic Engineering, Graduate School of Engineering, Tohoku UniversityAza-Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Ryu Kaiharat
Affiliation:
Department of Electronic Engineering, Graduate School of Engineering, Tohoku UniversityAza-Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Yuji Saitot
Affiliation:
Department of Electronic Engineering, Graduate School of Engineering, Tohoku UniversityAza-Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Yasuyuki Shirai
Affiliation:
Department of Electronic Engineering, Graduate School of Engineering, Tohoku UniversityAza-Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Masaki Hirayama
Affiliation:
Department of Electronic Engineering, Graduate School of Engineering, Tohoku UniversityAza-Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Abstract

A high-density plasma processing system featuring a radial line slot antenna has been developed for high-quality thin film formation at low temperature. This system is characterized by a high plasma density (above 1012 cm−3), a low electron temperature (below 1 eV) and a low plasma potential (less than 9 V). High-integrity silicon oxide films grown by direct oxidation of silicon surface at 400°C have been developed by introducing oxygen radical oxidation where oxygen radicals are obtained by a high-density plasma in He/O2 ambient. It is confirmed that the breakdown field intensity of oxide film is more than 15 MV/cm and the charge-to-breakdown is larger than 10 C/cm2under a constant stress current density of 0.1 A/cm2. The same high-density plasma system has also been applied for the direct nitridation of silicon surface using Ar/N2 or Ar/N,/H, gas ambient. The electrical properties of the silicon nitride are excellent enough to extend scaling limit of thermally grown silicon oxide. An advanced gas distribution system consisting of a newly-developed vaporizer, a flow control system, an electrically controlled valve and an advanced gas pumping system can control various source gas concentrations in the process chamber very accurately from the first atomic layer deposition. The newly-developed plasma and advanced gas distribution systems are suitable for the formation of high dielectric constant and ferroelectric films for ULSI in the 21st Century.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Kawai, Y., Konishi, N., Watanabe, J., and Ohmi, T.,AppL.Phys. Lett., 64, 2223, (1994)10.1063/1.111680Google Scholar
[2] Goto, N. and Yamamoto, M., IEJCEJpn., Tech. Rep., AP 80-57, (1980)Google Scholar
[3] Hirayama, M., Ohmi, T., Yamamoto, T., Ando, M., and Goto, N., Extended Abstracts, 43rd National Symposium on American Vacuum Society, (1996)Google Scholar
[4] Kaihara, R., Hirayama, M., and Ohmi, T., J. Electrochem. Soc., to be published.Google Scholar
[5] Shimada, H., Hirano, Y., Ushiki, T., and Ohmi, T., Technical Digest, International Electron Devices Meeting 1995, p.881, (1995)Google Scholar
[6] Ino, K., Shinohara, T., Ushiki, T., and Ohmi, T., J. Vac. Sci. Technol. A, 15, 2627 (1996)10.1116/1.580934Google Scholar
[7] Saito, Y., Sekine, K., Hirayama, M., and Ohmi, T., Jpn. J. Appl. Phys., No.4B 38 (1999) in printing.Google Scholar
[8] Ma, T. P., IEEE Trancs. Electron Device, vol 45, No.3, p.680 (1998)10.1109/16.661229Google Scholar
[9] Sekine, K., Saito, Y., Hirayama, M., and Ohmi, T., J. Vac. Sci. Technol. to be published.Google Scholar