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LPCVD of InN on GaAs(110) Using HN3 and TMIn: Comparison with Si(100) Results

Published online by Cambridge University Press:  15 February 2011

Y. Bu  and
M.C. Lin
Y. Bu
Affiliation:
Department of Chemistry, Emory University, Atlanta, GA 30322
M.C. Lin
Affiliation:
Department of Chemistry, Emory University, Atlanta, GA 30322
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Abstract

Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 Å (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. The He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of ∼100 nm were observed for InN on Si(100).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 21
Copyright
Copyright © Materials Research Society 1994

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