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Luminescence Properties of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

C. Peng ,
L. Tsybeskov  and
P. M. Fauchet
C. Peng
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
L. Tsybeskov
Affiliation:
Department of Physics & Asuonomy, University of Rochester, Rochester NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
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Abstract

We report the results of a systematic study of the influence of the anodization and etching conditions, and chemical and thermal treatments on the properties of light-emitting porous silicon (PSI). PSI layers with stable, high efficiency photoluminescence (PL) tunable from the near infrared to the yellow have been obtained using p-type and n-type substrates. As the temperature drops below 100 K, the as-anodized PSI layers display striking changes in the PL spectra, which are absent in PSI layers that have received a post-growth treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 121
Copyright
Copyright © Materials Research Society 1993

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References

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