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Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

Published online by Cambridge University Press:  10 February 2011

M. Albrecht ,
S. Christiansen ,
G. Salviati ,
C. Zanotti-Fregonara ,
Y. T. Rebane ,
Y. G. Shreter ,
M. Mayer ,
A. Pelzmann ,
M. Kamp  and
K. J. Ebeling
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M. Albrecht
Affiliation:
Universität Erlangen-Nümberg, Institut für Werkstoffwissenschaften, MikroCharakterisierung, Cauerstr.6, 91058 Erlangen, F.R.G
S. Christiansen
Affiliation:
Universität Erlangen-Nümberg, Institut für Werkstoffwissenschaften, MikroCharakterisierung, Cauerstr.6, 91058 Erlangen, F.R.G
G. Salviati
Affiliation:
CNR-MASPEC, Via Chiavari 18/A, 43100 Parma, Italy
C. Zanotti-Fregonara
Affiliation:
CNR-MASPEC, Via Chiavari 18/A, 43100 Parma, Italy
Y. T. Rebane
Affiliation:
A.F. Ioffe Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
Y. G. Shreter
Affiliation:
A.F. Ioffe Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
M. Mayer
Affiliation:
Universität Ulm, Abt. Optoelektronik, Albert-Einstein-Allee 45, 89069 Ulm, F.R.G
A. Pelzmann
Affiliation:
Universität Ulm, Abt. Optoelektronik, Albert-Einstein-Allee 45, 89069 Ulm, F.R.G
M. Kamp
Affiliation:
Universität Ulm, Abt. Optoelektronik, Albert-Einstein-Allee 45, 89069 Ulm, F.R.G
K. J. Ebeling
Affiliation:
Universität Ulm, Abt. Optoelektronik, Albert-Einstein-Allee 45, 89069 Ulm, F.R.G
M. D. Bremser
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202, USA
R. F. Davis
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202, USA
H. P. Strunk
Affiliation:
Universität Erlangen-Nümberg, Institut für Werkstoffwissenschaften, MikroCharakterisierung, Cauerstr.6, 91058 Erlangen, F.R.G
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Abstract

We correlate structure analyzed by transmission electron microscopy with photo- and cathodoluminescence studies of GaN/Al2O3(0001) and GaN/SiC(0001) and show that an additional UV line at 364nm/3.4eV can be connected to the occurrence of stacking faults. We explain the occurrence of this line by a model that is based on the concept of excitons bound to stacking faults that form a quantum well of cubic material in the wurtzite lattice of the layer material. The model is in reasonable agreement with the experimental observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 293
Copyright
Copyright © Materials Research Society 1997

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References

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