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Manipulation of Nucleation Sites in Solid-State Crystallization of Amorphous Si Films

Published online by Cambridge University Press:  25 February 2011

Hideya Kumomi  and
Takao Yonehara
Hideya Kumomi
Affiliation:
Canon Inc., R/D, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
Takao Yonehara
Affiliation:
Canon Inc., R/D, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Abstract

Nucleation sites are manipulated in amorphous Si films to control grain location and the size distribution during the solid-state crystallization. The principle of the method is theoretically investigated. Nucleation is suppressed and the sites are periodically formed in the plane of amorphous films by 2-step Si ion implantation. Thermal annealing causes preferential nucleation of single nuclei at the artificial sites and they grow laterally in the film. Consequently, 3 μm large grains were arranged in a matrix with a narrow size distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 645
Copyright
Copyright © Materials Research Society 1991

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References

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