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Material Parameters in a Thick Hydrogenated Amorphous Silicon Detector and their Effect on Signal Collection

Published online by Cambridge University Press:  25 February 2011

S. Qureshi ,
V. Perez-Mendez ,
S. N. Kaplan ,
I. Fujieda  and
G. Cho
S. Qureshi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720 R. A. Street, Xerox PARC, Palo Alto, CA 94304
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720 R. A. Street, Xerox PARC, Palo Alto, CA 94304
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720 R. A. Street, Xerox PARC, Palo Alto, CA 94304
I. Fujieda
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720 R. A. Street, Xerox PARC, Palo Alto, CA 94304
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720 R. A. Street, Xerox PARC, Palo Alto, CA 94304
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Abstract

Transient photoconductivity and ESR measurements were done to relate the ionized dangling bond density and the spin density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (∼30–35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 649
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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