Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T19:51:25.971Z Has data issue: false hasContentIssue false
  • English
  • Français

Materials Characterization of Nondestructive Readout Nonvolatile Memory Devices

Published online by Cambridge University Press:  21 February 2011

Bruce A. Tuttle ,
Dale C. McIntyre ,
Carleton H. Seager ,
Terry J. Garino ,
William L Warren ,
Joseph T. Evans  and
Robert W. Waldman
Bruce A. Tuttle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Dale C. McIntyre
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Carleton H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Terry J. Garino
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
William L Warren
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Joseph T. Evans
Affiliation:
Radiant Technologies, Inc., Albuquerque, NM 87109
Robert W. Waldman
Affiliation:
Radiant Technologies, Inc., Albuquerque, NM 87109
Get access

Abstract

Prototype ferroelectric thin film, nonvolatile memory, nondestructive readout (NDRO), semiconductor devices have been fabricated. The “1” and “0” logic states of these prototype devices are in principle determined by the modulation of the conductivity of a semiconductor film channel by the polarization state of the underlying ferroelectric thin film layer. Programmed resistance ratios of the two logic states of 5:1 are demonstrated. While the best performance to date has been achieved for devices that have a 40 nm ln2O3 film covering a 300 nm thick PZT 20/80 layer, we also develop criteria for selecting semiconductor films that will improve performance for this NDRO device design. Among the other semiconductor films that are characterized with respect to this criteria are boron doped Ge, ZnO and aluminum doped ZnO. It is demonstrated that by appropriate donor doping of ZnO films the effects of intrinsic defects are masked and that process temperatures can be extended by 300×C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 71
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Moll, J.L and Tarui, Y., IEEE Trans-Elegtron Devices, ED10, 328 (1963).Google Scholar
2. Zuleeg, R. and Weider, H.H., Solid State Electronics, 9, 657, (1966).Google Scholar
3. Crawford, J.C., Ferroelectrics, 1, 23–30 (1970).Google Scholar
4. Taylor, G.W., Ferroelectrics, 18, 17–20 (1978).Google Scholar
5. Budd, K., Dey, S., and Payne, D., Brit. Ceram. Soc. Proceedings, 36, 107–20 (1985).Google Scholar
6. Evans, J.T. and Bullington, J.A., U.S. Patent No. 5 070 385 (3 December 1991).Google Scholar
7. Evans, J.T. and Bullington, J.A., U.S. Patent No. 5 119 329 (2 June 1992).Google Scholar
8. Buhay, H., Sinharoy, S., Kasner, W., Francombe, M., Lampe, D. and Stepke, E., Appl. Phys. Lett., 58 14 1470–2 (1991).CrossRefGoogle Scholar
9. Yi, G., Wu, Z., and Sayer, M., J. AppI. Phys., 64 (5), 12717–24 (1988).Google Scholar
10. Tuttle, B., MRS Bulletin, 12 [7] 40–5 (1987).Google Scholar
11. Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, N.J., 443 (1972).Google Scholar