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Measurement of Fast Melting and Regrowth Velocities in Picosecond Laser Heated Silicon

Published online by Cambridge University Press:  15 February 2011

P. H. Bucksbaum  and
J. Bokor
P. H. Bucksbaum
Affiliation:
Bell Telephone Laboratories, Holmdel, New Jersey, USA
J. Bokor
Affiliation:
Bell Telephone Laboratories, Holmdel, New Jersey, USA
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Abstract

Fast regrowth of amorphous silicon from liquid silicon films has been directly observed in a time resolved picosecond laser melting experiment. Liquid films up to 100 nm thick were formed on crystalline substrates with 15 picosecond 248 nm pulses from a KrF* excimer laser. The film thickness as a function of time was probed directly by observing attenuation of 1.64 pm 15 psec light pulses transmitted through the melt. Melting and regrowth velocities were compared to a heat diffusion model, and evidence for melt undercooling was observed. The resolidified silicon was amorphous at all values of incident laser intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 51
Copyright
Copyright © Materials Research Society 1983

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References

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