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Measuring Residual Stress on the Nanometer Scale - Novel Tools for Fundamental and Applied Research

Published online by Cambridge University Press:  10 February 2012

R. B. Wehrspohn ,
M. Krause  and
C. Schriever
R. B. Wehrspohn
Affiliation:
Fraunhofer Institute for Mechanics of Materials IWM, Walter-Huelse-Str.1, 06120 Halle, Germany
M. Krause
Affiliation:
Fraunhofer Institute for Mechanics of Materials IWM, Walter-Huelse-Str.1, 06120 Halle, Germany
C. Schriever
Affiliation:
Martin-Luther-University Halle-Wittenberg, μMD Group/Institute of Physics, Heinrich-Damerow-Str. 4, 06120 Halle, Germany
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Abstract

In the present paper, strain measurements based on second harmonic generation (SHG) and electron backscatter diffraction (EBSD) is demonstrated via two illustrative applications. While SHG gains access to strains in buried interfaces, EBSD can be used to measure strains in crystalline thin films with high spatial resolution on the order of tens of nanometers and high surface sensitivity. In addition, target preparation using low-voltage ion beam milling is demonstrated, gaining access to unstrained sample positions in strained silicon on insulator (sSOI) systems which are necessary for common “pattern-shift” methodologies.

Keywords

elastic propertiesnanostructureion-solid interactions
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1424: Symposium SS – Properties and Processes at the Nanoscale Nanomechanics of Material Behavior , 2012 , mrsf11-1424-ss11-02
Copyright
Copyright © Materials Research Society 2012

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References

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