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Mechanism of Dose-Rate Dependence of Electrical Activation in Ion-Implanted GaAs

Published online by Cambridge University Press:  25 February 2011

Toshihiko Kanayama  and
Hisao Tanoue
Toshihiko Kanayama
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
Hisao Tanoue
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
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Abstract

To elucidate the mechanism of dose rate (DR) dependence of electrical activation, following two questions are investigated; why the amount of damage remaining after ion bombardment depends on DR and why it affects the electrical activation after high temperature annealing. From the observation that the DR dependence scales with temperature, the activation energy of recovery during ion irradiation has been estimated to be 0.75 and 1.0 eV. A higher DR suppresses the recovery and results in more damage, which in turn delays the electrical activation of implanted impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 159
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Vook, F. L. and Picraux, S. T., in Ion Implantation in Semiconductors, edited by Ruge, I. and Graul, J. (Springer, Berlin, 1971) pp. 141–150;Google Scholar
Harris, J. S., in Ion Implantation in Semiconductors, edited by Ruge, I. and Graul, J. (Springer, Berlin, 1971) pp. 157–167.Google Scholar
2. Ahmed, N. A. G., Christodoulides, C. E., and Carter, G., Radiat. Eff. 52, 211 (1980).Google Scholar
3. Wendler, F., Wesch, W., and Gots, G., Nucl. Instrum. Methods B52, 57 (1990).Google Scholar
4. Moore, F. G., Dietrich, H. B., Dobisz, E. A., and Holland, O. W., Appl Phys. Lett. 57, 911 (1990).CrossRefGoogle Scholar
5. Haynes, T. W. and Holland, O. W., Appl Phys. Lett. 58, 62 (1991); Nucl. Instrum. Methods B59/60, 1028 (1991).Google Scholar
6. Moore, F. G. and Dietrich, H. B., Nucl. Instrum. Methods B59/60, 978 (1991).CrossRefGoogle Scholar
7. Lezec, H. J., Musil, C. R., Melngaillis, J., Mahoney, L. J., and Woodhouse, J. D., J. Vac. Sci. Technol. B9, 2709 (1991).Google Scholar
8. Thommen, K., Radiat. Eff. 2, 201 (1970).CrossRefGoogle Scholar
9. Komuro, M., Kanayama, T., Hiroshima, H., and Tanoue, H., Appl Phys. Lett. 42 908 (1983).CrossRefGoogle Scholar
10. Komuro, M., Hiroshima, H., Tanoue, H., and Kanayama, T., J. Vac. Sci. Technol. B1 985 (1983).Google Scholar