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Mechanism of Electromigration Failure in Al Thin Film Interconnects Containing Sc

Published online by Cambridge University Press:  15 February 2011

Choong-Un Kim ,
S. H. Kang ,
F.Y. Génin  and
J. W. Morris Jr.
Choong-Un Kim
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and, Department of Materials Science, University of California, Berkeley
S. H. Kang
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and, Department of Materials Science, University of California, Berkeley
F.Y. Génin
Affiliation:
Chemistry and Materials Science, Lawrence Livermore National Laboratory Livermore, CA.
J. W. Morris Jr.
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and, Department of Materials Science, University of California, Berkeley
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Abstract

In order to understand the role of Sc on electromigration (EM) failure, Al interconnects with 0.1 and 0.3 wt.% Sc were tested as a function of post-pattern annealing time. In response to the evolution of the line structure, the statistics of lifetime evolved. While the addition of Sc greatly reduces the rate of evolution of the failure statistics because the grain growth rate decreases, the MTF variation was found to be very similar to that of pure Al. These observations seem to show that Sc has little influence on the kinetics of Al EM; however, it has some influence on the EM resistance of the line since it is an efficient grain refiner. Unlike Cu in Al, Sc does not seem to migrate, which may explain its lack of influence on the kinetics of Al EM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 289
Copyright
Copyright © Materials Research Society 1995

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