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Mesotaxy: Single-Crystal Growth of Buried Silicide Layers

Published online by Cambridge University Press:  25 February 2011

Alice E. White ,
K. T. Short ,
R. C. Dynes ,
J. P. Garno  and
J. M. Gibson
Alice E. White
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
R. C. Dynes
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
J. P. Garno
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
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Abstract

Recent progress in the growth of thin epitaxial silicides on silicon has resulted in films of very high quality with especially smooth interfaces. Using a completely different technique, high dose implantation followed by annealing, we have succeeded in creating buried single-crystal layers of CoSi2, NiSi2, and CrSi2 in crystalline silicon. The CoSi2 and NiSi2 layers grow in both the (100) and (111) orientations--those in (111) have better crystallinity, but those in (100) are of higher electrical quality. The CrSi2, on the other hand, only grows in the (111) orientation where its hexagonal structure has an almost perfect lattice match to silicon. We call this new internal growth process “mesotaxy” by analogy with epitaxy which refers to single-crystal growth on surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 93
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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