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Metal Wafer Bonding for MEMS Applications

Published online by Cambridge University Press:  01 February 2011

Viorel Dragoi ,
Gerald Mittendorfer ,
Franz Murauer ,
Erkan Cakmak  and
Eric Pabo
Viorel Dragoi
Affiliation:
v.dragoi@evgroup.com, EV Group, St. Florian/Inn, Austria
Gerald Mittendorfer
Affiliation:
g.mittendorfer@evgroup.com, EV Group, ST. Florian/Inn, Austria
Franz Murauer
Affiliation:
f.murauer@evgroup.com, EV Group, St. Florian/Inn, Austria
Erkan Cakmak
Affiliation:
E.Cakmak@EVGroup.com, Ev Group Inc., Tempe, Arizona, United States
Eric Pabo
Affiliation:
E.Pabo@EVGroup.com, EV Group Inc., Tempe, Arizona, United States
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Abstract

Metal layers can be used as bonding layers at wafer-level in MEMS manufacturing processes for device assembly as well as just for electrical integration of different levels. One has to distinguish between two main types of processes: metal diffusion bonding and bonding with formation of an interface eutectic alloy layer or an intermetallic compound. The different process principles determine also the applications area for each. From electrical interconnections to wafer-level packaging (with emphasis on vacuum packaging) metal wafer bonding is a very important technology in MEMS manufacturing processes.

Keywords

bondingalloymetal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1139: Symposium GG – Microelectromechanical Systems–Materials and Devices II , 2008 , 1139-GG03-33
Copyright
Copyright © Materials Research Society 2009

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References

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