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Metal/Porous Silicon Schottky Diode Structures as Sensors

Published online by Cambridge University Press:  01 February 2011

Tayyar Dzhafarov ,
Cigdem Oruc Lus ,
Sureyya AYDIN  and
Emel Cingi
Tayyar Dzhafarov
Affiliation:
caferov@yildiz.edu.trYildiz Technical UniversityPhysicsDavutpasaIstanbul N/A34210Turkey
Cigdem Oruc Lus
Affiliation:
oruc@yildiz.edu.tr, Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
Sureyya AYDIN
Affiliation:
suaydin@yildiz.edu.tr, Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
Emel Cingi
Affiliation:
cingi@yildiz.edu.tr, Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
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Abstract

In this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.

Keywords

diffusionsensorSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 915: Symposium R – Nanostructured Materials and Hybrid Composites for Gas Sensors and Biomedical Applications , 2006 , 0915-R06-13
Copyright
Copyright © Materials Research Society 2006

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References

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