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Microscopic role of a surfactant in epitaxial crystal growth

Published online by Cambridge University Press:  10 February 2011

Seung Mi Lee  and
Young Hee Lee
Seung Mi Lee
Affiliation:
Department of Semiconductor Science and Technology, Department of Physics and Semiconductor Physics Research Center
Young Hee Lee
Affiliation:
Jeonbuk National University, Jeonju, 561-756, Korea
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Abstract

We have investigated the kinetic role of a surfactant in the epitaxial crystal growth of Si/Ge using an ab initio molecular dynamics approach. We find that adsorption and diffusion of an adatom on monohydride Si(001) surface is drastically altered from that on a clean surface in several ways. We particularly emphasize the role of H as a surfactant, and this is further compared to typical group V materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 501: Symposium FF – Surface Controlled Nanoscale Materials for High-Added… , 1997 , 267
Copyright
Copyright © Materials Research Society 1998

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References

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