Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-27T16:09:09.019Z Has data issue: false hasContentIssue false
  • English
  • Français

The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride.

Published online by Cambridge University Press:  03 September 2012

P. Ruterana ,
G. Nouet ,
Th. Kehagias ,
Ph. Komninou ,
Th. Karakostas ,
M.A. di Forte Poisson  and
F. Huet
P. Ruterana*
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, ISMRA, 6 boulevard Maréchal Juin, 14050 Caen Cedex, France
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, ISMRA, 6 boulevard Maréchal Juin, 14050 Caen Cedex, France
Th. Kehagias
Affiliation:
Aristotle University, Physics Department, 54006 Thessaloniki, Greece
Ph. Komninou
Affiliation:
Aristotle University, Physics Department, 54006 Thessaloniki, Greece
Th. Karakostas
Affiliation:
Aristotle University, Physics Department, 54006 Thessaloniki, Greece
M.A. di Forte Poisson
Affiliation:
Thomson-CSF/Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cedex, France
F. Huet
Affiliation:
Aristotle University, Physics Department, 54006 Thessaloniki, Greece
*
Author for correspondence: email ruterana@lermat8.ismra.fr, Tel: 33 2 31 45 26 53, Fax: 33 2 31 45 26 60
Get access

Abstract

When the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.75
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lin, M.E., Ma, F., Huang, F.Y., Fan, Z. F., Allen, L.H., and Morkoç, H., Appl. Phys. Lett. 64, 1003(1994)Google Scholar
2. Fan, Z., Mohammad, S.N., Kim, W., Actas, O., Botchkarev, A.E., and Morkoç, H., Appl. Phys. Lett., 68, 1672(1996)Google Scholar
3. Rusimov, S., Liliental-Weber, Z., Washburn, J., Dustad, K.J., Haller, E.E., Fan, Z.F., Mohammad, S.N., Kim, W., Botchkarev, A.E., and Morkoç, H., Appl. Phys.Lett., 69, 1556(1996)Google Scholar
4. Dimitriadis, C. A., Logothetidis, S. and Alexandrou, I., Appl. Phys. Lett.,, 66, 502(1995)Google Scholar
5. Dimitriadis, C. A., Karakostas, T., Logothetidis, S., Kamarinos, G., Brini, J., and Nouet, G., Solid State Electron., in pressGoogle Scholar