Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-27T15:13:41.911Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure Dependence of Hydrogen Sensing Properties of Palladium Functionalized Tungsten Oxide Films

Published online by Cambridge University Press:  09 January 2012

Meng Zhao ,
Jian-Xing Huang  and
Chung-Wo Ong
Meng Zhao
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, P.R.C. Department of Electronic Science and Technology, Changzhou University, Changzhou, P.R.C.
Jian-Xing Huang
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, P.R.C.
Chung-Wo Ong
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, P.R.C.
Get access

Abstract

Tungsten oxide (WO3) films were prepared by using magnetron sputtering. Substrate temperature and sputtering pressure were adjusted to vary the microstructure. The films were found to contain nanoclusters; while their size L, and porosity θ and surface roughness zRMS of the film can be varied. After adding a palladium coating on the film surface, the hydrogen (H2) sensing properties of the films, including sensitivity of detection, response time and recovery time were measured. Their dependences on L, θ and zRMS were analyzed and interpreted. The information achieved is useful for improving H2 sensor technology.

Keywords

microstructuregrain sizesensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1406: Symposium Z – Functional Metal-Oxide Nanostructures , 2012 , mrsf11-1406-z05-51
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schlapbach, L., Nature 460, 809 (2009).Google Scholar
2. Tollefson, J., Nature 464, 1262 (2010).Google Scholar
3. Shaver, P.J., Appl. Phys. Lett. 11, 255 (1967).Google Scholar
4. Fardindoost, S., Zad, A. I., Rahimi, F., and Ghasempour, R., Int J Hydrogen Energ 35, 854 (2010).Google Scholar
5. Nakagawa, H., Yamamoto, N., Okazaki, S., Chinzei, T., and Asakura, S., Sensor Actuat B-Chem 93, 468 (2003).Google Scholar
6. Shanak, H., Schmitt, H., Nowoczin, J., and Ziebert, C., Solid State Ionics 171, 99 (2004).Google Scholar
7. Ippolito, S. J., Kandasamy, S., Kalantar-zadeh, K., and Wlodarski, W., Sensor Actuat B-Chem 108, 154 (2005).Google Scholar
8. Bittencourt, C., Felten, A., Espinosa, E. H., Ionescu, R., Moreau, N., Heszler, P., Granqvist, G., Pireaux, J. J. and Llobet, E., Smart Mater Struct 15, 1555 (2006)Google Scholar
9. Jakubik, W. P., Thin Solid Films 517, 6188 (2009).Google Scholar
10. Hoel, A., Reyes, L. R., Saukko, S., Heszler, P., Lantto, V. and Granqvist, C. G., Sensor Actuat B-Chem 105, 283 (2005).Google Scholar
11. Feynman, R. P., Leighton, R. B., and Sands, M., The Feynman lectures on physics, (Addison-Wesley Publishing Company, Reading, 1970) p. 32–7.Google Scholar
12. Zhao, M., Huang, J. X., Wong, M. H., Tang, Y. M., and Ong, C. W., Rev Sci Instrum 82, 105001 (2011)Google Scholar
13. Zucrow, M. J. and Hoffman, J. D., Gas dynamics, (Wiley, New York, 1976) p.12.Google Scholar
14. Thornton, J. A., Vac, J.. Sci. Technol., 11,66 (1974).Google Scholar
15. Franke, M. E., Koplin, T. J., and Simon, U., Small 2, 36 (2006).Google Scholar
16. Barsan, N., and Weimar, U., J Electroceram 7, 143 (2001).Google Scholar
17. Sahner, K., and Tuller, H. L., J Electroceram 24, 177 (2010).Google Scholar