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The Microstructure of Transiently Annealed Donor Implants inGaAs

Published online by Cambridge University Press:  25 February 2011

M.A. Shahid ,
R. Bensalem  and
B.J. Sealy
M.A. Shahid
Affiliation:
Department of Electronic and Electrical Engineering University of Surrey, Guildford, Surrey GU2 5XH, U.K.
R. Bensalem
Affiliation:
Department of Electronic and Electrical Engineering University of Surrey, Guildford, Surrey GU2 5XH, U.K.
B.J. Sealy
Affiliation:
Department of Electronic and Electrical Engineering University of Surrey, Guildford, Surrey GU2 5XH, U.K.
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Abstract

Undoped SI (100) GaAs has been implanted with selenium and tin ions at roomtemperature at an ion energy of 300 keV and using ion dose in the range 1 × 1014 to 1 × 1015 ions cm−2. Transientannealing at 1000°C and above has been studied using electrical measurementsand transmission electron microscopy. The results show that tin implantedsamples have comparatively higher values of electrical activity and mobilitythan those implanted with selenium ions. A difference in the microstructureof these two implants was observed. Selenium implanted samples showdislocation lines and loops possessing 1/2<110> Burgers vectors whiletin implanted GaAs contains dislocation loops of 1/2<110> and1/3<111> types and also dislocation lines having 1/2<110>Burgers vectors. Both types of defect in tin implanted samples are decoratedwith precipitates.

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References

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