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The Microstructure of Transiently Annealed Donor Implants in GaAs

Published online by Cambridge University Press:  25 February 2011

M.A. Shahid ,
R. Bensalem  and
B.J. Sealy
M.A. Shahid
Affiliation:
Department of Electronic and Electrical EngineeringUniversity of Surrey, Guildford, Surrey GU2 5XH, U.K.
R. Bensalem
Affiliation:
Department of Electronic and Electrical EngineeringUniversity of Surrey, Guildford, Surrey GU2 5XH, U.K.
B.J. Sealy
Affiliation:
Department of Electronic and Electrical EngineeringUniversity of Surrey, Guildford, Surrey GU2 5XH, U.K.
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Abstract

Undoped SI (100) GaAs has been implanted with selenium and tin ions at room temperature at an ion energy of 300 keV and using ion dose in the range 1 × 1014 to 1 × 1015 ions cm−2. Transient annealing at 1000°C and above has been studied using electrical measurements and transmission electron microscopy. The results show that tin implanted samples have comparatively higher values of electrical activity and mobility than those implanted with selenium ions. A difference in the microstructure of these two implants was observed. Selenium implanted samples show dislocation lines and loops possessing 1/2<110> Burgers vectors while tin implanted GaAs contains dislocation loops of 1/2<110> and 1/3<111> types and also dislocation lines having 1/2<110> Burgers vectors. Both types of defect in tin implanted samples are decorated with precipitates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 489
Copyright
Copyright © Materials Research Society 1985

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References

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