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Microwave Glow-Discharge Deposition of Amorphous Silicon Based Alloys at High Deposition Rates for Solar Cell Application

Published online by Cambridge University Press:  15 February 2011

S. Guha ,
X. Xu ,
J. Yang  and
A. Banerjee
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
X. Xu
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
J. Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
A. Banerjee
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
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Abstract

The optimum deposition conditions for growth of amorphous silicon (a-Si:H) and silicon-germanium (a-SiGe:H) alloys deposited at high rates using microwave glow-discharge are found to be quite different from those for radio-frequency glow-discharge material deposited at low rates. High substrate temperature (350 to 500 °C), low pressure (1–5 mtorr) and positive ion bombardment are found to be desirable for optimum growth conditions at high deposition rates. We have achieved an active-area efficiency of 11.44% for a double-junction structure in which the bottom cell incorporates a-SiGe:H alloy deposited at 100 Å/sec using microwave glow-discharge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 621
Copyright
Copyright © Materials Research Society 1995

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References

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