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The Mobility Lifetime Product of Electrons as a Function of Temperature and Electron Concentrations in a-Si:H

Published online by Cambridge University Press:  16 February 2011

Shinichi Nishida  and
Hellmut Fritzsche
Shinichi Nishida
Affiliation:
NEC Corporation, Functional Devices Research Laboratories, 4–1–1 Miyazaki, Miyamae-ku Kawasaki, Kanagawa 216, Japan
Hellmut Fritzsche
Affiliation:
University of Chicago, James Franck Institute, 5640 S. Ellis Ave., Chicago, IL 60637
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Abstract

The photo-field effect has been measured between 4.2K and 300K using an a-Si thin film transistor. The data are fit self-consistently taking full account of changes in space charge, photo carrier drift, diffusion and recombination. Gap state density and capture cross sections are fitting parameters. Evidence for tunnel recombination is found. Electron localization radius was found to be 13Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 389
Copyright
Copyright © Materials Research Society 1994

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