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Mocvd Erbium Sourcesa

Published online by Cambridge University Press:  21 February 2011

Anton C. Greenwald ,
William S. Rees Jr.  and
Uwe W. Lay
Anton C. Greenwald
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
William S. Rees Jr.
Affiliation:
Florida State University, Dittmer Laboratory of Chemistry, Tallahassee, FL 32306
Uwe W. Lay
Affiliation:
Florida State University, Dittmer Laboratory of Chemistry, Tallahassee, FL 32306
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Abstract

The overall objective of this research is to develop source materials for doping AIGaAs. We compared Er(C5H5)3 to Er{N[Si(CH3)3]2)3 for purity, decomposition kinetics and doping of germanium films deposited from Ge(CH3)4 in a hydrogen atmosphere. Cyclopentadienyl erbium left large amounts of carbon both in pure metal films, and in the germanium film, at low pressure and temperatures to 850°C. Bis-(tri-methylsilyl) erbium amide decomposed cleanly without carbon, nitrogen or silicon in the deposited film.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 21
Copyright
Copyright © Materials Research Society 1993

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Footnotes

a

This work was supported by Strategic Defense Initiative Organization and monitored by Air Force Office of Scientific Research, Contract No. F49620-92-C-0060

References

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