Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-19T13:15:48.092Z Has data issue: false hasContentIssue false
  • English
  • Français

MOCVD OF SrS and SrS:Ce Thin Films for Eelctroluminescent Flat Panel displays

Published online by Cambridge University Press:  10 February 2011

John A. Samuels ,
David C. Smith ,
Kerry N. Siebein ,
Kenny Salazar ,
Richard T. Tuenge ,
Christian F. Schaus ,
Christopher N. King ,
H. Le ,
J. Hitt  and
R. L. Thuemler
...Show all authors
John A. Samuels
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545.
David C. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545.
Kerry N. Siebein
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545.
Kenny Salazar
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545.
Richard T. Tuenge
Affiliation:
Planar Systems, Inc. Beaverton, OR 97006.
Christian F. Schaus
Affiliation:
Planar Systems, Inc. Beaverton, OR 97006.
Christopher N. King
Affiliation:
Planar Systems, Inc. Beaverton, OR 97006.
H. Le
Affiliation:
Oregon State University, Corvallis, OR 97331
J. Hitt
Affiliation:
Oregon State University, Corvallis, OR 97331
R. L. Thuemler
Affiliation:
Oregon State University, Corvallis, OR 97331
J. F. Wager
Affiliation:
Oregon State University, Corvallis, OR 97331
Get access

Abstract

High quality SrS and SrS:Ce thin films were deposited from Sr(thd)2, Ce(thd)4 and H2S via a low pressure MOCVD process. Film characteristics were found to be insensitive to the presence of the cerium dopant in the concentration range investigated. Depositions were carried out for a wide temperature range (250–550° C). Deposition rates were found to be relatively insensitive for the temperature range investigated. The films produced were found to be highly crystalline at all temperatures investigated. Deposited material showed texturing as a function of substrate material and temperature. FWHM of the <111> reflections were found to have a 2Θ values of 0.15–0.18 deg. for all temperatures. RBS and AES shows stoichiometric 1:1 SrS with less than 2% carbon and oxygen contaminates. ERD indicates the films to have 1 – 2.5% hydrogen. Films doped with 0.019 – 0.043 atom – 250 volts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 15
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Baliey, P., Carkner, D., Wu, X. Digest of 1995 SID Int. Symp. 484 (1995).Google Scholar
2. Leppanen, M., Harkonene, G., Pakkala, A., Soininen, E., Tornqvist, R., Eurodisplay, 93, Proc. 13th Int Disp. Res. Conf., Strasbourg, 229 (1993).Google Scholar
3. Mauch, R. H., Velthaus, K. -O., Huttl, B., Troppenz, U., Herrmann, R., Digest of 1995 SID Int. Symp., 720 (1995) and references therein.Google Scholar
4. Sherman, A., Chemical Vapor Deposition For Microelectronics, (Noyes Publications, New Jersey, 1987).Google Scholar
5. a) Harsta, A., Carlsson, J.-O., J. Cryst. Growth, 110, 631 (1991) and references therein. b) H.Yamazaki, T. Tsuyama, I. Kobayashi, Y. Sugimori, Jpn. J. Appl. Phys. 31, 2995 (1992). c) T. Kimura, H. Yamauchi, H. Machida, H. Kokubun, M. Yamada, Jpn. J. Appl. Phys., 33, 5119 (1994).Google Scholar
6. Helbing, R., Birecki, H., DiCarolis, S. A., Feigelson, R. S., Hiskes, R., J. Crys. Growth, 146, 599 (1995).Google Scholar
7. ZnS/ATO/ITO/glass = Zinc Sulfide/Aluminum Titanium Oxide/Indium Tin Oxide/glass.Google Scholar
8. Experimental error for FWHM measurments = +/− 0.015 deg.Google Scholar
9. Planar Systems, Inc. (private communications).Google Scholar
10. Niinisto, L., Leskella, M., Appl. Surface Sci. 82/83, 454 (1994).Google Scholar
11. Mauch, R. H., Proc. of the 7th Int. Workshop on Electroluminenescence, Beijing 1994 (unpublished).Google Scholar