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MOCVD Process of Ferroelectric Lead Germanate Thin Films and Bottom Electrode Effects

Published online by Cambridge University Press:  10 February 2011

Fengyan Zhang ,
Tingkai Li ,
Tue Nguyen  and
Sheng Teng Hsu
Fengyan Zhang
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA98607
Tingkai Li
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA98607
Tue Nguyen
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA98607
Sheng Teng Hsu
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA98607
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Abstract

Pb5Ge3O11 is a new promising candidate for nonvolatile memory such as one-transistor memory applications because of its moderate polarization and relative low dielectric constant. But this material is a low symmetry ferroelectric material and it is said the spontaneous polarization exists only along the c-axis. Furthermore, in the PbO- GeO 2 system, the stability range for the Pb5Ge3O11 phase is very limited and that even a relatively small deviation in composition or in growth temperature could lead to the formation of other lead germanate compounds. Many methods have been used to grow Pb5Ge3O11 film. This is the first time the Pb5Ge3O1 thin film has been successfully grown by advanced MOCVD technique with a liquid delivery system. This paper will discuss the MOCVD process for growing Pb5Ge3O11 thin films on different electrodes (Pt, Ir and Pt/Ir). The properties of these electrodes, the microstructures of the Pb5Ge3O11 thin films on these electrodes and their ferroelectric properties will be discussed. The advanced two-step deposition technique has been used to improve the uniformity of the Pb5Ge3O11 film. Pure c-axis oriented Pb5Ge3O11 thin film and polycrystalline Pb5Ge3O11 thin film with preferred c-axis orientation and some Pb3GeO5 secondary phase have been successfully grown on these electrodes with good ferroelectric properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 549
Copyright
Copyright © Materials Research Society 1999

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References

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