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A Model for Indium Incorporation in the Growth of InGaN Films

Published online by Cambridge University Press:  10 February 2011

E. L. Piner ,
F. G. McIntosh ,
J. C. Roberts ,
K. S. Boutros ,
M. E. Aumer ,
V. A. Joshkin ,
N.A. El-Masry ,
S.M. Bedair  and
S.X. Liu
E. L. Piner
Affiliation:
North Carolina State University, MS&E Department, Raleigh, NC 27695
F. G. McIntosh
Affiliation:
North Carolina State University, ECE Department, Raleigh, NC 27695
J. C. Roberts
Affiliation:
North Carolina State University, ECE Department, Raleigh, NC 27695
K. S. Boutros
Affiliation:
Philips Research Laboratories, Briarcliff Manor, NY
M. E. Aumer
Affiliation:
North Carolina State University, ECE Department, Raleigh, NC 27695
V. A. Joshkin
Affiliation:
North Carolina State University, ECE Department, Raleigh, NC 27695
N.A. El-Masry
Affiliation:
North Carolina State University, MS&E Department, Raleigh, NC 27695
S.M. Bedair
Affiliation:
North Carolina State University, ECE Department, Raleigh, NC 27695
S.X. Liu
Affiliation:
North Carolina State University, ECE Department, Raleigh, NC 27695
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Abstract

The development of high quality indium based III-nitride compounds is lagging behind the corresponding aluminum and gallium based compounds. Potential problems confronting the growth of epitaxial and double heterostructure InGaN will be discussed. A mass balance model is presented describing the competing reaction pathways occurring during the growth of indium containing compounds. Atomic layer epitaxy and metalorganic chemical vapor deposition grown InGaN films will be used to explain this model. Also, the growth parameters leading to the attainment of high InN percentages, reduced indium metal formation, and improved structural and optical properties of indium containing nitrides will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 85
Copyright
Copyright © Materials Research Society 1997

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References

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