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A Model of Chemical Mechanical Polishing: The Role of Inhibitors

Published online by Cambridge University Press:  01 February 2011

Ed Paul
Ed Paul*
Affiliation:
Stockton College, Pomona NJ 08240 and Robert Vacassy, Cabot Microelectronics, Aurora IL 60504
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Abstract

A previously presented model of CMP is extended to include the role of inhibitors. In CMP, a chemical reaction forms a surface film which is removed mechanically by abrasives. When inhibitor molecules bond to the surface film, the mechanical abrasion rate is reduced. The general model will be discussed, and then applied to W-CMP explaining differences in the reduction of polishing rates for different inhibitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F1.2
Copyright
Copyright © Materials Research Society 2003

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