Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-04-27T14:29:42.174Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling of Dopant Defect Interactions

Published online by Cambridge University Press:  21 March 2011

C. Camarce ,
L. Radic ,
P. Keys ,
R. Brindos ,
K.S. Jones  and
M. E. Law
C. Camarce
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Florida, Gainesville, FL 32611
L. Radic
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Florida, Gainesville, FL 32611
P. Keys
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611
R. Brindos
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611
K.S. Jones
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611
M. E. Law
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Florida, Gainesville, FL 32611
Get access

Abstract

This paper presents a model for {311} defects based on in-situ experiments. The model fits the 311 dependence on silicon implant energy and doses. The surface dependence of the model is described in detail, and compared to previous literature data. New data is presented on the surface effect on {311} dissolution and the model is compared to that data. In addition, the model is also used to explain the effects of doping on {311} defect behavior. Doping does not influence the dissolution of {311} defects, but only influences their nucleation behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J9.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Eaglesham, D., and Gossmann, H.-J., “Simulation of Cluster Evaporation and Transient Enhanced Diffusion in Silicon,” Appl. Phys. Lett., vol. 68, pp. 2395–2397, 1996.Google Scholar
[2] Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., and Poate, J. M., “Implantation and Transient B Diffusion in Si: The Source of the Interstitials,” Appl. Phys. Lett., vol. 65, pp. 2305–2307, 1994.Google Scholar
[3] Law, M. E. and Jones, K. S., “A New Model for {311} Defects Based on In-Situ Measurements,” presented at International Electron Devices Meeting, San Francisco, 2000.Google Scholar
[4] Tian, S., Morris, M. F., Morris, S. J., Obradovic, B., Wang, G., Tasch, A. F., and Snell, C. M., “A Detailed Physical Model for Ion Implant Induced Damage in Silicon,” IEEE Transactions of Electron Devices, vol. 45, pp. 1226–1238, 1998.Google Scholar
[5] Cuturla, M. J., delaRubia, T. D., Marques, L. A., and Gilmer, G. H., “Ion-Beam Processing of Silicon at keV Energies: A Molecular Dynamics Study,” Phys Rev. B, vol. 54, pp. 16683–95, 1996.Google Scholar
[6] Cowern, N. E. B., Jaraiz, M., Cristiano, F., Claverie, A., and Mannino, G., “Fundamental Diffusion Issues for Deep-Submicron Device Processing,” presented at International Electron Devices Meeting, Washington, DC, 1999.Google Scholar
[7] Bedrossian, P. J., Caturla, M.-J., and Rubia, T. D. d. l., “Damage Evolution and Surface Defect Segregation in Low-Ebergy Ion-Implanted Silicon,” Appl. Phys. Lett., vol. 70, pp. 176–178, 1997.Google Scholar
[8] Law, M. E., Haddara, Y. M., and Jones, K. S., “Effect of the Silicon/Oxide Interface on Interstitials: Di-Intersitial Recombination,” Journal of Applied Physics, vol. 84, pp. 3555–60, 1998.Google Scholar
[9] Venezia, V. C., Kalyanaraman, R., H.-J. Gossmann, L., Rafferty, C. S., and Werner, P., “Depth dependence of {311} defect dissolution,” Applied Physics Letters, Submitted.Google Scholar
[10] Brindos, R., Keys, P., Jones, K. S., and Law, M. E., “Effect of Arsenic on Extended Defect Evolution in Silicon,” presented at Materials Research Society Symposium, San Francisco, 2001.Google Scholar
[11] Keys, P., Jones, K. S., Law, M. E., Puga-Lambers, M., and Cea, S. M., “Dopant-Defect Clustering in Phosphorus Implant Silicon: Experimentation and Modeling,” presented at Materials Research Symposium, San Farncisco, 2001.Google Scholar