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Modeling of Extended Defects in Silicon

Published online by Cambridge University Press:  03 September 2012

M. E. Law ,
K. S. Jones ,
S. K. Earles ,
A. D. Lilak  and
J-W. Xu
M. E. Law
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
K. S. Jones
Affiliation:
Department of MSE, University of Florida, Gainesville, FL, 32611
S. K. Earles
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
A. D. Lilak
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
J-W. Xu
Affiliation:
Semiconductor Group, Texas Instruments, Inc., Dallas, TX 75243
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Abstract

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 45
Copyright
Copyright © Materials Research Society 1997

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