Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T09:36:19.670Z Has data issue: false hasContentIssue false
  • English
  • Français

Modelling of Drift Mobility Experiments on a-Si:H

Published online by Cambridge University Press:  15 February 2011

Wen Chao Chen ,
Louis-André Hamel ,
Mathieu Kemp  and
Arthur Yelon
Wen Chao Chen
Affiliation:
Groupe de recherche en physique et technologie des couches minces (GCM), Département de Physique, Université de Montréal C.P. 6128, Succursale centre-ville, Montréal, Québec H3C 3J7, Canada
Louis-André Hamel
Affiliation:
Groupe de recherche en physique et technologie des couches minces (GCM), Département de Physique, Université de Montréal C.P. 6128, Succursale centre-ville, Montréal, Québec H3C 3J7, Canada
Mathieu Kemp
Affiliation:
Zoology Department, Duke University, Durham, NC 27708-0325, USA
Arthur Yelon
Affiliation:
Groupe de recherche en physique et technologie des couches minces (GCM), Département de Génie Physique et Génie des Matériaux, École Polytechnique de Montréal C.P. 6079, Succursale centre-ville, Montréal, Québec H3C 3A7, Canada
Get access

Abstract

We present recent results of a study of the behavior of electronic carriers in a-Si:H, using the model of multiple trapping (MT) in an exponential density of states. In previous publications, using Monte Carlo simulations, we showed that the standard low field MT model gives reasonable agreement with experiment particularly if the Meyer-Neldel effect is included in the model. We report here on the results of including two other effects. First, we have included a simple model of field assisted detrapping, to take account of the effect of high fields. We obtain very good agreement with the results of measurements on both electrons and holes, from a number of laboratories. In addition, we show here that the validity of an effective temperature approach can be checked easily by comparison with experiment. Second, we have presented a simple model of rapid relaxation of trapped carriers. This model offers the possibility of removing the apparent inconsistency between these measurements, and other experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 433
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chen, W.C., Hamel, L.A., in: Amorphous Silicon Technology - 1996, ed. Hack, M., Schiff, E.A., Wagner, S., Schropp, R. and Matsuda, A. (Materials Research Society, Pittsburgh, PA, 1996) p. 759.Google Scholar
2. Chen, W.C., Hamel, L.A., Yelon, A., J. Non-Cryst. Solids 220, 254 (1997).Google Scholar
3. Tiedje, T., in Semiconductors and Semimetals, edited by Pankove, J. (Academic Press, New York, 1984) Vol. 21C, p.207.Google Scholar
4. Tiedje, T., in Physics of Hydrogenated Amorphous Silicon, edited by Joannopoulos, J. D. and Lucovsky, G. (Springer, New York, 1984), Vol. 2, p. 261.Google Scholar
5. Antoniadis, H., Schiff, E.A., Phys. Rev B 43, 13957 (1991).Google Scholar
6. Gu, Qing, Schiff, E.A, Chévrier, J.B. and Equer, B., Phys. Rev. B 52, 5695 (1995).Google Scholar
7. Nebel, C.E., Street, R.A., Johnson, N.M., Kocka, J., Phys. Rev. B 46, 6789 (1992).Google Scholar
8. Chen, W.C., Hamel, L.A., Yelon, A., accepted for publication in J. Non-Cryst. Solids..Google Scholar
9. Chen, W.C., Kemp, M., Hamel, L.A., Yelon, A., to be published.Google Scholar
10. Shklovskii, B.I., Levin, E.I., Fritzsche, H. and Baranovskii, S.D., in Advances in Disordered Semiconductors, Vol 3, ed. Fritzsche, H. (World Scientific, 1990), p.161.Google Scholar
11. Nebel, C.E., Bauer, G.H., Phil. Mag. B 59, 463 (1989).Google Scholar
12. Juška, G., Arlauskas, K., Kocka, J., J. Non-Cryst. Solids, 189–200 202 (1996).Google Scholar
13. Nebel, C.E., Street, R.A., Phil. Mag. B 67, 407 (1993).Google Scholar
14. Silver, M., Adler, D., in Optical Effects in Amorphous Semiconductors, AIP Conf. Proc. No. 120, ed. by Taylor, P.C. and Bishop, G. (Snowbird, Utah, 1984) p.197.Google Scholar
15. Kemp, M., in Amorphous Silicon Technology - 1995, ed. by Hack, M., Schiff, E.A., Madan, A., Powell, M. and Matsuda, A. (Materials Research Society, Pittsburgh, 1995) p.157.Google Scholar