Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-26T13:29:52.875Z Has data issue: false hasContentIssue false

Molecular Beam Epitaxial Growth Mode Transitions on Vicinal Surfaces

Published online by Cambridge University Press:  21 February 2011

V.I. Trofimov
Affiliation:
Institute of Radio Engineering and Electronics of RAS, Mokhovaya str., 11, Moscow 103907, Russia, FAX: 7-(095)-2038414, vitolst@ire.uucp.uucp.free.msk.su.
B.K. Medvedev
Affiliation:
Institute of Radio Engineering and Electronics of RAS, Mokhovaya str., 11, Moscow 103907, Russia, FAX: 7-(095)-2038414, vitolst@ire.uucp.uucp.free.msk.su.
V.G. Mokerov
Affiliation:
Institute of Radio Engineering and Electronics of RAS, Mokhovaya str., 11, Moscow 103907, Russia, FAX: 7-(095)-2038414, vitolst@ire.uucp.uucp.free.msk.su.
A.G. Shumyankov
Affiliation:
Institute of Radio Engineering and Electronics of RAS, Mokhovaya str., 11, Moscow 103907, Russia, FAX: 7-(095)-2038414, vitolst@ire.uucp.uucp.free.msk.su.
Get access

Abstract

Kinetic model of MBE growth on vicinal surface is investigated. The model includes step propagation, nucleation and growth of islands on the terraces and Schwoebel barrier at descending step edges as -well. By numerical solution of kinetic rate equations for growth on stepped surface, adatom and island density profiles across a terrace are obtained. With using simple criterion for growth mode transition the "phase diagram" of growth modes in parametric space γ–β is constructed, γ∼J/D and β∼tan-2φ, where J is the atomic flux, D is the surface diffusion coefficient and φ is the substrate miscut angle. The transition curve in the γ–β plane separating step flow mode region from the mixed (step-flow+nucleation) growth mode region is well describded by a simple equation γ=A/β3 where constant A=10 and 100 with and without Schwoebel effect. The relations for critical terrace width (miscut angle) and transition temperature are derived and it is shown that these relations are in fairly well agreement with available experimental data on the MBE growth of GaAs.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Myers-Beaghton, A.K. and Vvedensky, D.D., Phys. Rev. B42, 5544 (1990); J.Phys. A23, 995 (1990); J.Cryst.Growth, 111, 162 (1991).Google Scholar
2 Ratsch, C., Nelson, M.D. and Zangwill, A.. Phys.Rev. B50 14489 (1994).Google Scholar
3 Zhang, Z., Lagally, M.G. Phys. Rev. Lett. 72, 693 (1994).Google Scholar
4 Osten, H.J., Lippert, G. and Klatt, J., J.Vac.Sci. Technol. B10 1151 (1992).Google Scholar
5 Massios, J., Grandjean, N. and Etgens, V.H., Appl. Phys.Lett. 61, 99 1992).Google Scholar
6 Xiao, R.-F. and Ming, N.-B., Phys.Rev. E49, 4720 (1994).Google Scholar
7 Amar, J.G., Family, F. and Lam, P.-M. Phys. Rev. B50, 8781 (1994).Google Scholar
8 Ko, D.Y.K. and Seno, F., Phys. Rev. B50, 17583 (1994).Google Scholar
9 Johnson, M.D., Orme, C., Hunt, A.W., Graff, D., Sudijono, J., Sander, L.M. and Orr, B.G., Phys.Rev.Lett. 72, 116 (1994).Google Scholar
10 Tersoff, J., Denier van der Gon, A.W. and Tromp, R.M., Phys. Rev. 72, 266 (1994).Google Scholar
11 Trofimov, V.I., Medvedev, B.K., Mokerov, V.G. and Shumyankov, A.G., Reports of RAS (in Russian). 344, 40 (1995).Google Scholar
12 Trofimov, V.I., Medvedev, B.K., Mokerov, V.G. and Shumyankov, A.G., submitted to Reports of RAS.Google Scholar
13 Venables, J.A., Spiller, G.D.T. and Hanbuken, M., Rept.Progr.Phys. 47, 399 (1984).Google Scholar
14 Trofimov, V.I. and Osadchenko, V.A. Growth and Morphology of Thin Films, in Russian ( Energoatomizdat Moscow, 1993), 272pp.Google Scholar
15 Schwoebel, R.L. and Shipsey, E.J., J.Appl.Phys. 37, 3682 (1966).Google Scholar
16 Neave, J.H., Dobson, P.J., AJoyce, B. and Zhang, J., Appl.Phys.Lett., 47, 100 (1985).Google Scholar
17 wanari, S.I, Kimura, Y. and Takayanagi, K., J.Cryst.Growth 119, 241 (1992).Google Scholar