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Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

Published online by Cambridge University Press:  31 January 2011

Dmitri Lubyshev ,
Joel M. Fastenau ,
Ying Wu ,
Andrew Synder ,
Amy W. K. Liu ,
Mayank T. Bulsara ,
Eugene A. Fitzgerald ,
Miguel Urteaga ,
Wonill Ha  and
Joshua Bergman
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Dmitri Lubyshev
Affiliation:
dloubychev@iqep.com, IQE, Inc., Bethlehem, Pennsylvania, United States
Joel M. Fastenau
Affiliation:
Jfastenau@iqep.com, IQE, Inc., Bethlehem, Pennsylvania, United States
Ying Wu
Affiliation:
ywu@iqep.com, IQE, Inc., Bethlehem, Pennsylvania, United States
Andrew Synder
Affiliation:
asynder@iqep.com, IQE, Inc., Bethlehem, Pennsylvania, United States
Amy W. K. Liu
Affiliation:
aliu@iqep.com, IQE, Inc., Bethlehem, Pennsylvania, United States
Mayank T. Bulsara
Affiliation:
bulsara@paradigmresearch.net, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, Massachusetts, United States
Eugene A. Fitzgerald
Affiliation:
eafitz@mit.edu, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, Massachusetts, United States
Miguel Urteaga
Affiliation:
murteaga@teledyne.com, Teledyne Scientific Company, Thousand Oaks, California, United States
Wonill Ha
Affiliation:
wha@teledyne.com, Teledyne Scientific Company, Thousand Oaks, California, United States
Joshua Bergman
Affiliation:
jbergman@teledyne.com, Teledyne Scientific Company, Thousand Oaks, California, United States
M. J. Choe
Affiliation:
mchoe@teledyne.com, Teledyne Scientific Company, Thousand Oaks, California, United States
Bobby Brar
Affiliation:
bbrar@teledyne.com, Teledyne Scientific Company, Thousand Oaks, California, United States
William E. Hoke
Affiliation:
William_E_Hoke@raytheon.com, Raytheon Integrated Defense Systems, Andover, Massachusetts, United States
Jeffrey R. LaRoche
Affiliation:
Jeffrey_R_LaRoche@raytheon.com, Raytheon Integrated Defense Systems, Andover, Massachusetts, United States
Abbas Torabi
Affiliation:
Abbas_Torabi@raytheon.com, Raytheon Integrated Defense Systems, Andover, Massachusetts, United States
Thomas E. Kazior
Affiliation:
Thomas_E_Kazior@Raytheon.com, Raytheon Integrated Defense Systems, Andover, Massachusetts, United States
David Smith
Affiliation:
dave.smith@raytheon.co.uk, Raytheon Systems Ltd., Glenrothes, United Kingdom
David Clark
Affiliation:
david.clark@raytheon.co.uk, Raytheon Systems Ltd., Glenrothes, United Kingdom
Robin F. Thompson
Affiliation:
robin.f.thompson@raytheon.co.uk, Raytheon Systems Ltd., Glenrothes, United Kingdom
Charlotte Drazek
Affiliation:
charlotte.drazek@soitec.fr, SOITEC, Parc Technologique des Fontaines, Bernin, France
Nicolas Daval
Affiliation:
nicolas.daval@soitec.fr, SOITEC, Parc Technologique des Fontaines, Bernin, France
Lamine Benaissa
Affiliation:
lamine.benaissa@cea.fr, CEA-LETI, MINATEC, Grenoble, France
Emmanuel Augendre
Affiliation:
emmanuel.augendre@cea.fr, CEA-LETI, MINATEC, Grenoble, France
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Abstract

We report on a direct epitaxial growth approach for the heterogeneous integration of high speed III-V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBTs) structures were successfully grown on patterned Si-on-Lattice-Engineered-Substrate (SOLES) substrates using molecular beam epitaxy. DC and RF performance similar to those grown on lattice-matched InP were achieved in growth windows as small as 15×15μm2. This truly planar approach allows tight device placement with InP-HBTs to Si CMOS transistors separation as small as 2.5 μm, and the use of standard wafer level multilayer interconnects. A high speed, low power dissipation differential amplifier was designed and fabricated, demonstrating the feasibility of using this approach for high performance mixed signal circuits such as ADCs and DACs.

Keywords

molecular beam epitaxy (MBE)III-VSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1194: Symposium A – High-k Dielectrics on Semiconductors with High Carrier Mobility , 2009 , 1194-A09-01
Copyright
Copyright © Materials Research Society 2010

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