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Molecular Dynamics Simulations of Low-Energy Ion/Surface Interactions During Vapor Phase Crystal Growth: 10 eV Si Incident on Si(001)2×1

Published online by Cambridge University Press:  25 February 2011

M. Kitabatake ,
P. Fons  and
J. E. Greene
M. Kitabatake
Affiliation:
Dept. of Materials Science, CSL, University of Illinois, 1101 W. Springfield, Urbana, IL 61801
P. Fons
Affiliation:
Dept. of Materials Science, CSL, University of Illinois, 1101 W. Springfield, Urbana, IL 61801
J. E. Greene
Affiliation:
Dept. of Materials Science, CSL, University of Illinois, 1101 W. Springfield, Urbana, IL 61801
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Abstract

Molecular dynamics simulations, utilizing the Tersoff many-body potential, were used to investigate the effects of 10 eV Si atom bombardment of a (001)2×1 terminated Si lattice. The irradiation events were initiated at an array of points in the primitive surface unit cell. Each event was followed to determine kinetic energy redistribution in the lattice as a function of time, projectile and lattice atom trajectories, and the nature, number, and depth of residual defects. Dimer breaking, epitaxial growth, position exchange, and the formation of residual hexagonal and split interstitials were observed. There were no residual vacancies. Impact points leading to each of the above results clustered in distinctly different regions of the surface unit cell. Bulk interstitials were annealed out over time scales corresponding to monolayer deposition during Si MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 259
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 See, for example, the following review article and references therein: Greene, LE., Barnett, S. A., Sundgren, J.-E., and Rockett, A., in Low-Energy Ion/Surface Interactions During Film Growth. ed. by Itoh, T. (Elsevier, Amsterdam, 1988), Chapter 5.Google Scholar
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