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Monte-Carlo simulation of the deposition process in PVD-technoIogy

Published online by Cambridge University Press:  15 February 2011

E. Lugscheider ,
O. Knotek ,
F. Löffler ,
U. Schnaut  and
P. Eckert
E. Lugscheider
Affiliation:
Werkstoffwissenschaften Materials Science Institute, Aachen University of Technology, Germany.
O. Knotek
Affiliation:
Werkstoffwissenschaften Materials Science Institute, Aachen University of Technology, Germany.
F. Löffler
Affiliation:
Werkstoffwissenschaften Materials Science Institute, Aachen University of Technology, Germany.
U. Schnaut
Affiliation:
Werkstoffwissenschaften Materials Science Institute, Aachen University of Technology, Germany.
P. Eckert
Affiliation:
Werkstoffwissenschaften Materials Science Institute, Aachen University of Technology, Germany.
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Abstract

The Magnetron Sputter Ion Plating (MSIP) technology has been applied in a wide range of modem technological fields, due to the virtually unlimited potential of coating and substrate materials. However, up to now, the development of optimization has been depending mainly on empiricism and experiments.

Energies and the directions of the particles sputtered with various ejection angles and initial energies from the target surface are changed due to collisions with gas atoms during their movement within the sputtering chamber. Therefore the particles have a distribution of incident energies and angles which have a great influence on structure and properties of thin film coatings. This paper describes computer investigations to simulate the motions of the particles from target to substrate using a Monte-Carlo method and a binary collision approximation. The applied model takes into account non-uniform sputtering effects of the target in the MSIP process due to the magnetic field and the erosion zone.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 359
Copyright
Copyright © Materials Research Society 1995

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References

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