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MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270°C

Published online by Cambridge University Press:  01 February 2011

Li Wang ,
Sima Dimitrijev ,
Leonie Hold ,
Frederick Kong ,
Philip Tanner ,
Jisheng Han  and
Gunter Wagner
Li Wang
Affiliation:
wangli9916@126.com, Griffith University, Queensland Microtechnology Facility and Griffith School of Engineering, 170 Kessels Road,, Brisbane, 4111, Australia
Sima Dimitrijev
Affiliation:
s.dimitrijev@griffith.edu.au, Griffith University, Queensland Microtechnology Facility and Griffith School of Engineering, 170 Kessels Road,, Brisbane, 4111, Australia
Leonie Hold
Affiliation:
l.hold@griffith.edu.au, Griffith University, Queensland Microtechnology Facility and Griffith School of Engineering, 170 Kessels Road,, Brisbane, 4111, Australia
Frederick Kong
Affiliation:
f.kong@griffith.edu.au, Griffith University, Queensland Microtechnology Facility and Griffith School of Engineering, 170 Kessels Road,, Brisbane, 4111, Australia
Philip Tanner
Affiliation:
p.tanner@griffith.edu.au, Griffith University, Queensland Microtechnology Facility and Griffith School of Engineering, 170 Kessels Road,, Brisbane, 4111, Australia
Jisheng Han
Affiliation:
j.han@griffith.edu.au, Griffith University, Queensland Microtechnology Facility and Griffith School of Engineering, 170 Kessels Road,, Brisbane, 4111, Australia
Gunter Wagner
Affiliation:
wagner@ikz-berlin.de, Institute of Crystal Growth, Max-Born-Str. 2, Berlin, 12489, Germany
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Abstract

SiC films were deposited on Si substrate by low pressure hot-wall CVD using C3H8 (5% in H2)-SiH4 (2.5% in H2)-H2 gas system at 1270°C and 1370°C. In this paper, we compare the electrical characteristics of MOS capacitors fabricated on the 3C-SiC films grown at high and low temperatures, 1370°C and 1270°C, respectively. Although the cross-sectional TEM images indicate similar micro-structural quality of the SiC/Si interface for both temperatures, a quicker elimination rate of stacking faults with increasing thickness was observed in the films grown at 1370°C. Rocking curves from XRD measurements also indicate better crystallinity of the films grown at 1370°C. On the other hand, atomic force microscopy shows that the average surface roughness reduces with the reduction in growth temperature. MOS capacitors were made on films grown at both temperatures and characterized by high-frequency capacitance-voltage (HFCV), conductance-voltage (G-V), and current-voltage (I-V) measurements at room temperature. The MOS capacitors fabricated on both films exhibit good and almost identical C-V characteristics. Measurements of current-voltage characteristics in accumulation region showed smaller leakage for the film deposited at 1270°C. It is concluded that the decrease of the deposition temperature from 1370°C to 1270°C does not bring any remarkable negative impact on the interface properties of fabricated MOS capacitors.

Keywords

chemical vapor deposition (CVD) (deposition)deviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D13-03
Copyright
Copyright © Materials Research Society 2008

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References

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