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MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  21 February 2011

J.M. Redwing ,
J.S. Flynn ,
M.A. Tischler ,
W. Mitchel  and
A. Saxler
J.M. Redwing
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Dr., Danbury, CT 06810
J.S. Flynn
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Dr., Danbury, CT 06810
M.A. Tischler
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Dr., Danbury, CT 06810
W. Mitchel
Affiliation:
Electronic and Optical Materials Branch, Wright-Patterson AFB, OH
A. Saxler
Affiliation:
Electronic and Optical Materials Branch, Wright-Patterson AFB, OH
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Abstract

We have fabricated AlxGa1−xN/GaN heterostructures with high two-dimensional electron gas (2DEG) mobilities and high sheet carrier densities by metalorganic vapor phase epitaxy (MOVPE). The 2DEG sheet density and mobility exhibit a compositional dependence on the Al fraction of the electron donor layer. The highest mobility (5750 cm2/Vs at 16K) was measured in a sample with x=0.15 that had a sheet carrier density of 8.5×1012 cm−2. The undoped AlxGa1−xN layers have low background carrier concentrations and can be intentionally doped n-type using SiH4. The effect of intentional n-type doping of the AlxGa1−xN donor layer on the electrical properties of the 2DEG was studied in structures that included an undoped AlxGa1−xN spacer layer of varying thickness. Higher 2DEG mobilities were obtained when a 100Å thick undoped layer was included in the structure due to spatial separation of the 2DEG from ionized impurities in the doped AlxGa1−xN. These initial results demonstrate that the electrical properties of AlxGa1−xN/GaN heterostructures can be controlled by intentional doping and appropriate layer design.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 201
Copyright
Copyright © Materials Research Society 1996

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References

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