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Multilayer Lead Zirconate Titanate and Barium Titanate Ferroelectric Capacitors

Published online by Cambridge University Press:  10 February 2011

L.H. Chang  and
W.A. Anderson
L.H. Chang
Affiliation:
ECE Department, State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260
W.A. Anderson
Affiliation:
ECE Department, State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260
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Abstract

Ferroelectric PbZrxT1−xO3 (PZT) thin films have been deposited on Pt coated Si substrates by if magnetron sputtering. The optimized processing condition to obtain proper stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties was demonstrated using a PZT target with Pb(Zr+Ti) ratio of 1.2 and depositing at 350°C, followed by thermal treatment at 620°C for 30 min. The structural and electrical properties of the PZT layer were further improved by fabricating a novel multilayer structure which combined the PZT with the nanolayer BaTiO3. The leakage current density was reduced from 2×10−7 A/cm2 for the single layer structure to 2×10−9 A/cm2 for the multilayer structure at a field of 4×105 V/cm, while maintaining a high relative effective dielectric constant of 442. The relative dielectric constant of the PZT film in the multilayer structure was calculated to be about 880.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 231
Copyright
Copyright © Materials Research Society 1996

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References

1. Jia, Q.X., Chang, L.H. and Anderson, W.A., Thin Solid Films, 259, 264 (1995).Google Scholar
2. Jia, Q. X, Chang, L.H. and Anderson, W.A., Ferroelectrics, 166, 111 (1995).Google Scholar
3. Chang, L.H. and Anderson, W.A., 7th International Conference on Solid Films and Surfaces, Hsinchu, Taiwan, Dec. 12–16, 1994.Google Scholar
4. Sreenivas, K. and Sayer, M., J, Appl. Phys., 64, 1484 (1988).Google Scholar
5. Sawyer, C.B. and Tower, C.H., Phys. Rev., 35, 269 (1930).Google Scholar
6. Okada, A., J. Appl. Phys., 49, 653 (1978).Google Scholar
7. Huffman, M., Goral, J. and Jones, K., Thin Solid Films 193, 1017 (1990).Google Scholar
8. Chen, H.D., Udayakumar, K. and Cross, L., J. Appl. Phys., 77, 3349 (1995).Google Scholar
9. Etzold, K.F., Roy, R., Saenger, K. and Cuomo, J., Materials Research Society Symposium Proceedings 200, 197 (1990).Google Scholar
10. Roy, R.A. and Etzold, K.F., J. Mater. Res., 7, 1455 (1992).Google Scholar
11. Abe, K., Tomita, H. and Yokote, Y., Jpn. J. Appl. Phys., 30, 2152 (1991).Google Scholar
12. Kwok, C.K. and Desu, S.B., J. Mater. Res., 7, 339 (1993).Google Scholar
13. Tokumitsu, E., Itani, K., Moon, B. and Ishiwara, H., Materials Research Society Symposium Proceedings 361, 427 (1995).Google Scholar