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Multiwafer Movpe of III-Nitride Films for Led and Laser Applications

Published online by Cambridge University Press:  10 February 2011

R. Beccard ,
O. Schoen ,
B. Schineller ,
D. Schmitz ,
M. Heuken  and
H. Juergensen
R. Beccard
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com
O. Schoen
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com
B. Schineller
Affiliation:
Institut firk Haibleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen, Germany + 49-241-80 77 45, + 49-241-88 88 199, mailbox @iht.rwth-aachen.de
D. Schmitz
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com
M. Heuken
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com Institut firk Haibleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen, Germany + 49-241-80 77 45, + 49-241-88 88 199, mailbox @iht.rwth-aachen.de
H. Juergensen
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com
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Abstract

Process for mass production of GaN and its related alloys, InGaN and AlGaN, have been optimized to achieve high device yield and low cost of ownership. Here we present some of the latest results obtained from AIX 2000 HT Planetary Reactor® in a configuration of 7×2” which provides unique uniformity capabilities due to the two fold rotation of the substrates. GaiN single layers with background electron concentrations below 5·1016 cm-3 and intended doping levels up to 1018 cm-3 p-type and 1020 cm-3 n-type with state of the art homogeneities have been achieved. Thickness homogeneities have been shown to be better than 1% standard deviation on full 2” wafers, while composition uniformity of ternary material is determined by room temperature photoluminescence mappings. Low temperature photoluminescence and reflectance spectra of single layer GaN revealed free exciton transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 155
Copyright
Copyright © Materials Research Society 1998

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References

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