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Nano-Scale Heteroepitaxy Control of Magnetic Oxide Thin Films on Ultra-Smooth Sapphire Substrates

Published online by Cambridge University Press:  17 March 2011

Masahiro Takakura ,
Takafumi Miyahara ,
Junichi Tashiro ,
Atsushi Sasaki ,
Mitsuyasu Furusawa  and
Mamoru Yoshimoto
Masahiro Takakura
Affiliation:
Ceramics Materials & Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Takafumi Miyahara
Affiliation:
Ceramics Materials & Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Junichi Tashiro
Affiliation:
Ceramics Materials & Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Atsushi Sasaki
Affiliation:
Ceramics Materials & Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Mitsuyasu Furusawa
Affiliation:
Ceramics Materials & Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Mamoru Yoshimoto
Affiliation:
Ceramics Materials & Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan e-mail: yoshimo@oxide.rlem.titech.ac.jp
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Abstract

We have examined the novel heteroepitaxy of magnetic oxide thin films on ultra-smooth sapphire substrates by laser MBE for fabrication of low-dimensional structures. Employing the atomically controlled substrate surfaces with atomic steps and terraces, we demonstrate the deposition of magnetic oxide nanowires (~0.5 nm high and ~20 nm wide) and nanodots of (Mn, Zn) ferrite, Fe3O4 and NiO.

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